Samsung pushes PRAM for future memory

Samsung has produced the first prototype of a new type of memory that it claims will replace NOR flash within 10 years.

Dubbed Phase-change Random Access Memory (PRAM), the new memory combines the speed of Ram memory with the non-volatile features of Flash memory.

The big difference between PRAM and NOR flash though is that data already stored does not have to be erased first before new data is added, making it 30 times faster.

The new memory module is half the size of NOR flash and the lifespan is estimated to be 10 times longer.

PRAM will be targeted at makers of multifunction handsets and portable media players where fast performance is a priority. Modules will also be easier to produce since the production process requires 20 fewer steps than current NOR flash production.

Samsung showed off a 512Mbit prototype in Seoul today and expects the new memory format to go into production in 2008.